Package and heat dissipation of high power LED(1)

The smooth silicon surface has high reflectivity with aluminum metal layer。LED welding surface coated with gold, in order to provide the best heat conduction, and the chip and the lead frame, The bonding strength of copper radiator.ledlight local to the integral package structure schematic diagram. Its main characteristics: low thermal resistance ( 14 ℃ /W),only conventional LED of One of ten equal parts; high reliability,flexible package filled inside with the gel stability, at 40 to 120 ℃,
when due to temperature change can not be generated the internal stress,so that the wire and lead frame of a disconnected, and prevent the epoxy resin lens lead frame change to yellowing, nor because of oxidation and smear; the design of reflector cup and lens to make the radiation pattern, improve the efficiency of controllable optical.
In addition, the output optical power, good external quantum efficiency, LED solid state light source development to a new level. The wafer is thin, so it can play the maximum effectiveness of heat conduction,let the LED heat dispose quickly through this to the radiator.
In all kinds of ledlight products, a primary heat sink (Slug) (thickness of about 1.5mm) through the epoxy paste on MCPCB. The interconnection between MCPCB security of electricity (electrical interconnect), also with the second stage heat sink connection interface. In case no aluminum heat sink under the second level, LED can work under the room temperature, but the MCPCB is easy to reach 70 ℃.
Though the Multistage heat sink has a little resistance increased,but the Package and heat dissipation of high power LED The radiating surface greatly expanded (thermal conductivity in channel heat sink is often called the heatspreade two thermal diffusion layer, in the three dimension should have higher rate), so that the convection and radiation heat dissipation capability is greatly enhanced, and thus the whole system is improved.ledlight local to the integral package structure sketch。another figure limit the maximum junction temperature is a silicon carrier and inter chip due to different thermal expansion coefficient of the maximum allowable limit thermal stress. In many cases, high power LED chip by transition of Submount or heat spreader, mounted on the MCPCB, while the MCPCB close to the aluminum heat sink, both smooth surface or spring-loaded screws fastening。